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Schematics and FE-SEM images of layer stacks used for XRF investigation. One stack has an intermediate CdSe layer while the other does not; the total geometric thickness of CdTe is equivalent, but the sample with CdSe has large voids, indicating loss of CdTe.

Journal: Science and Technology of Advanced Materials

Article Title: Formation of configurable uniform CdSeTe thin films by close-space sublimation deposition of multiple alternating CdSe and CdTe layers

doi: 10.1080/14686996.2026.2633815

Figure Lengend Snippet: Schematics and FE-SEM images of layer stacks used for XRF investigation. One stack has an intermediate CdSe layer while the other does not; the total geometric thickness of CdTe is equivalent, but the sample with CdSe has large voids, indicating loss of CdTe.

Article Snippet: Absorber cross-sections were imaged with field emission scanning electron microscopy (FE-SEM) (Hitachi, Japan SU8000) using material and crystal orientation contrast of backscattered electrons.

Techniques: